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AP60L02S

Features: Low Gate Charge Simple Drive Requirement Fast SwitchingSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage ±20 V ID@TC=25 Continuous Drain Current, VGS @ 10V 50 A ID@TC=100 Continuous Drain Current, VGS @ 1...

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SeekIC No. : 004286351 Detail

AP60L02S: Features: Low Gate Charge Simple Drive Requirement Fast SwitchingSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage ±20 V ...

AP60L02S Data Sheet

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Part Number:
AP60L02S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low Gate Charge
Simple Drive Requirement
Fast Switching


Specifications

Symbol Parameter Rating Units
VDS Drain-Source Voltage 25 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V 50 A
ID@TC=100 Continuous Drain Current, VGS @ 10V 32 A
IDM Pulsed Drain Current1 180 A
PD@TC=25 Total Power Dissipation 62.5 W/
  Linear Derating Factor 0.5 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150



Description

The Advanced Power MOSFETs from APEC AP60L02S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60L02S) is available for low-profile applications.




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