Features: Low Gate Charge Simple Drive Requirement Fast SwitchingSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage ±20 V ID@TC=25 Continuous Drain Current, VGS @ 10V 50 A ID@TC=100 Continuous Drain Current, VGS @ 1...
AP60L02GS: Features: Low Gate Charge Simple Drive Requirement Fast SwitchingSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage ±20 V ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Parameter | Rating | Units |
VDS | Drain-Source Voltage | 25 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID@TC=25 | Continuous Drain Current, VGS @ 10V | 50 | A |
ID@TC=100 | Continuous Drain Current, VGS @ 10V | 32 | A |
IDM | Pulsed Drain Current1 | 180 | A |
PD@TC=25 | Total Power Dissipation | 62.5 | W/ |
Linear Derating Factor | 0.5 | W | |
TSTG | Storage Temperature Range | -55 to 150 | |
TJ | Operating Junction Temperature Range | -55 to 150 |
The Advanced Power MOSFETs AP60L02GS from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60L02GS) is available for low-profile applications.