Features: • 800 2200 MHz• +38.5 dBm P1dB• -50 dBc ACLR @ 1W PAVG• -51 dBc IMD3 @ 1W PEP• 15% Efficiency @ 1W PAVG• Internal Active Bias• Internal Temp Compensation• Capable of handling 7:1 VSWR @ 28 Vcc, 2.14 GHz, 5.5W CW Pout• Lead-free/RoHS-...
AP603: Features: • 800 2200 MHz• +38.5 dBm P1dB• -50 dBc ACLR @ 1W PAVG• -51 dBc IMD3 @ 1W PEP• 15% Efficiency @ 1W PAVG• Internal Active Bias• Internal Temp Comp...
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The AP603 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while being able to achieve high performance for 800-2200 MHz applications with up to +38.5 dBm of compressed 1dB power.
The AP603 uses a high reliability, high voltage InGaP/GaAs HBT process technology. The device incorporates proprietary bias circuitry to compensate for variations in linearity and current draw over temperature. The module does not require any negative bias voltage; an internal active bias allows the AP603 to operate directly off a commonly used high voltage supply (typically +24 to +32V). An added feature allows the quiescent bias to be adjusted externally to meet specific system requirements.
The AP603 is targeted for use as a pre-driver and driver stage amplifier in wireless infrastructure where high linearity and high efficiency is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G mobile infrastructure.