AP501

Noise Figure :
Bandwidth :
Package / Case :
Maximum Operating Temperature : + 85 C
Packaging : Reel
Operating Supply Voltage : 12 V
Type : Power Amplifier
Output Intercept Point : 52 dBm
Mounting Style : Through Hole
Supply Current : 870 mA
Operating Frequency : 1930 MHz to 1990 MHz


Features:

• 1930 1990 MHz
• 32.5 dB Gain
• +36 dBm P1dB
• -62 dBc ACPR
@ 27 dBm IS-95A linear power
• -55 dBc ACLR
@ 26.5 dBm wCDMA linear power
• +12 V Single Supply
• Power Down Mode
• Bias Current Adjustable
• RoHS-compliant flange-mount pkg


Application

• Final stage amplifiers for repeaters
• Optimized for driver amplifier PA mobile infrastructure


Specifications

Operating Case Temperature.....-40 to +85 °C
Storage Temperature........ -55 to +150 °C
RF Input Power (continuous)
with output terminated in 50 ........ +15 dBm

Description

The AP501 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage amplifier module has 32.5 dB gain, while being able to achieve high performance for PCS-band applications with +36 dBm of compressed 1dB power. The module has been internally optimized for driver applications provide -62 dBc ACPR at 27 dBm for IS-95A applications or -55 dBc ACLR at 26.5 for wCDMA applications. The module can be biased down for current when higher efficiency is required.

The AP501 uses a high reliability InGaP/GaAs HBT process technology and does not require any external matching components. The module operates off a +12V supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifier to maintain high linearity over temperature. It has the added feature of a +5V power down control pin. A low-cost metal housing allows the device to have a low thermal resistance to ensure long lifetimes. All devices are 100% RF and DC tested.

The AP501 is targeted for use as a driver or final stage amplifier in wireless infrastructure where high linearity and high power is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G base stations.