AP501

RF Amplifier 1930-1990MHz 32.5dB Gain

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AP501 Picture
SeekIC No. : 00613297 Detail

AP501: RF Amplifier 1930-1990MHz 32.5dB Gain

floor Price/Ceiling Price

Part Number:
AP501
Mfg:
TriQuint Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/11/24

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Product Details

Quick Details

Type : Power Amplifier Operating Frequency : 1930 MHz to 1990 MHz
Output Intercept Point : 52 dBm Operating Supply Voltage : 12 V
Supply Current : 870 mA Maximum Operating Temperature : + 85 C
Mounting Style : Through Hole Packaging : Reel    

Description

Noise Figure :
Bandwidth :
Package / Case :
Maximum Operating Temperature : + 85 C
Packaging : Reel
Operating Supply Voltage : 12 V
Type : Power Amplifier
Output Intercept Point : 52 dBm
Mounting Style : Through Hole
Supply Current : 870 mA
Operating Frequency : 1930 MHz to 1990 MHz


Features:

• 1930 1990 MHz
• 32.5 dB Gain
• +36 dBm P1dB
• -62 dBc ACPR
@ 27 dBm IS-95A linear power
• -55 dBc ACLR
@ 26.5 dBm wCDMA linear power
• +12 V Single Supply
• Power Down Mode
• Bias Current Adjustable
• RoHS-compliant flange-mount pkg



Application

• Final stage amplifiers for repeaters
• Optimized for driver amplifier PA mobile infrastructure



Specifications

Operating Case Temperature.....-40 to +85 °C
Storage Temperature........ -55 to +150 °C
RF Input Power (continuous)
with output terminated in 50 ........ +15 dBm




Description

The AP501 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage amplifier module has 32.5 dB gain, while being able to achieve high performance for PCS-band applications with +36 dBm of compressed 1dB power. The module has been internally optimized for driver applications provide -62 dBc ACPR at 27 dBm for IS-95A applications or -55 dBc ACLR at 26.5 for wCDMA applications. The module can be biased down for current when higher efficiency is required.

The AP501 uses a high reliability InGaP/GaAs HBT process technology and does not require any external matching components. The module operates off a +12V supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifier to maintain high linearity over temperature. It has the added feature of a +5V power down control pin. A low-cost metal housing allows the device to have a low thermal resistance to ensure long lifetimes. All devices are 100% RF and DC tested.

The AP501 is targeted for use as a driver or final stage amplifier in wireless infrastructure where high linearity and high power is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G base stations.




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