AP4953GM

The AP4953GM is designed as the P-channel enhancement mode power MOSFET which produced by the Advanced Power Electronics Corp. with three points of features:(1)simple drive requirement;(2)low on-resistance;(3)fast switching.The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and costeffectiveness.The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

The absolute maximum ratings of the AP4953GM can be summarized as:(1)drain-source voltage:-30 V;(2)gate-source voltage:±20 V;(3)continuous drain current(Id@TA=25):-5 A;(4)continuous drain current(Id@TA=70):-4 A;(5)pulsed drain current:-20 A;(6)total power dissipation:2 W;(7)linear derating factor:0.016 W/;(8)storage temperature range:-55 to 150;(9)operating junction temperature range:-55 to 150;(10)thermal resistance junction-ambient:62.5 /W.If you want to know more information such as the electrical characteristics about the AP4953GM,please download the datasheet in www.seekdatasheet.com .