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AP4511GM

Specifications Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -35 V VGS Gate-Source Voltage ±20 ±20 V ID@TA=25 Continuous Drain Current3 7 -6.1 A ID@TA=70 Continuous Drain Current3 5.7 -5 A ...

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SeekIC No. : 004286328 Detail

AP4511GM: Specifications Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -35 V VGS Gate-Source Voltage ±20 ±20 V ID@TA=25 Co...

AP4511GM Data Sheet

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Part Number:
AP4511GM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS Drain-Source Voltage
30
-35
V
VGS Gate-Source Voltage
±20
±20
V
ID@TA=25 Continuous Drain Current3
7
-6.1
A
ID@TA=70 Continuous Drain Current3
5.7
-5
A
IDM Pulsed Drain Current1
30
-30
A
PD@TA=25 Total Power Dissipation
2.0
W
  Linear Derating Factor
0.016
W/
TSTG Storage Temperature Range
-55 to 150
TJ Operating Junction Temperature Range
-55 to 150



Description

The Advanced Power MOSFETs AP4511GM from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and costeffectiveness.

The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.




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