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AP4232GM

Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TA=25 Continuous Drain Current3 7.8 A ID@TA=70 Continuous Drain Current3 6.2 A IDM Pulsed Drain Current1 30 A ...

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SeekIC No. : 004286320 Detail

AP4232GM: Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TA=25 Continuous Drain Current3 7.8 A ...

AP4232GM Data Sheet

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Part Number:
AP4232GM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Specifications

Symbol
Parameter
Rating
Units
VDS
 Drain-Source Voltage
30
V
VGS
 Gate-Source Voltage
±20
V
ID@TA=25
 Continuous Drain Current3
7.8
A
ID@TA=70
 Continuous Drain Current3
6.2
A
IDM
 Pulsed Drain Current1
30
A
PD@TA=25
 Total Power Dissipation
2
W
 Linear Derating Factor
0.016
W/
TSTG
 Storage Temperature Range
-55 to 150
TJ
 Operating Junction Temperature Range
-55 to 150
1.Pulse width limited by Max. junction temperature
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 /W when mounted on Min. copper pad.


Description

The Advanced Power MOSFETs AP4232GM from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.




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