Features: Low Gate Charge Simple Drive Requirement Fast SwitchingSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TA=25 Continuous Drain Current -10 A ID@TA=70 Continuous Drain Current -8.6 A IDM P...
AP3403H: Features: Low Gate Charge Simple Drive Requirement Fast SwitchingSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ...
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Symbol | Parameter | Rating | Units |
VDS | Drain-Source Voltage | -30 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID@TA=25 | Continuous Drain Current | -10 | A |
ID@TA=70 | Continuous Drain Current | -8.6 | A |
IDM | Pulsed Drain Current1 | -48 | A |
PD@TA=25 | Total Power Dissipation | 36.7 | W/ |
Linear Derating Factor | 0.29 | W | |
TSTG | Storage Temperature Range | -55 to 150 | |
TJ | Operating Junction Temperature Range | -55 to 150 |
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device AP3403H
.The TO-252/TO-251 package is universally used for all commercialindustrial application.