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AP2605Y

Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ± 20 V ID@TA=25 Continuous Drain Current3 -4 A ID@TA=70 Continuous Drain Current3 -3.3 A IDM Pulsed Drain Current1 -20 A PD@TA=25 Total Power Dissipation 2...

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SeekIC No. : 004286276 Detail

AP2605Y: Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ± 20 V ID@TA=25 Continuous Drain Current3 -4 A ID@TA=70 Continuous D...

AP2605Y Data Sheet

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Part Number:
AP2605Y
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Specifications

Symbol Parameter Rating Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage ± 20 V
ID@TA=25 Continuous Drain Current3 -4 A
ID@TA=70 Continuous Drain Current3 -3.3 A
IDM Pulsed Drain Current1 -20 A
PD@TA=25 Total Power Dissipation 2 W
  Linear Derating Factor 0.016 W/
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150



Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device AP2605Y.

The SOT-26 package is universally used for all commercial-industrial applications.


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