AP2030M

Pinout




Specifications

Symbol	Parameter	Rating		Units
		N-channel	P-channel
VDS	Drain-Source Voltage	20	-20	V
VGS	Gate-Source Voltage	±8	±8	V
ID@TA=25	Continuous Drain Current3	6	-5	A
ID@TA=70	Continuous Drain Current3	4.8	-4	A
IDM	Pulsed Drain Current1	20	-20	A
PD@TA=25	Total Power Dissipation	2.0		W
	Linear Derating Factor	0.016		W/
TSTG	Storage Temperature Range	-55 to 150
TJ	Operating Junction Temperature Range	-55 to 150

Description

The Advanced Power MOSFETs AP2030M from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.