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AP09N20H

Features: Simple Drive Requirement Low On-resistance Fast Switching CharacteristicsSpecifications Symbol Parameter Rating Unit VDSVGSID@TC=25ID@TC=100IDMPD@TC=25EASIARTSTGTJ Drain-Source VoltageGate-Source VoltageContinuous Drain Current, VGS @ 10VContinuous Drain Current, VGS...

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SeekIC No. : 004286060 Detail

AP09N20H: Features: Simple Drive Requirement Low On-resistance Fast Switching CharacteristicsSpecifications Symbol Parameter Rating Unit VDSVGSID@TC=25ID@TC=100IDMPD@TC=25EASIARTSTGTJ Dra...

AP09N20H Data Sheet

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Part Number:
AP09N20H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

Simple Drive Requirement
Low On-resistance
Fast Switching Characteristics


Specifications

Symbol
Parameter
Rating
Unit
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25

EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Avalanche Current
Operating Junction Temperature Range
Linear Derating Factor
Storage Temperature Range
200
± 30
8.6
5.5
36
69
0.55
40
8.6
-55to150
-55to150
V
V
A
A
A
W
W/
mJ
A




Description

The Advanced Power MOSFETs AP09N20H from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The AP09N20H is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP09N20J) is available for lowprofile applications.




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