AP0420

Features: SpecificationsDescriptionAP0420 is a kind of monolithic P-channel enhancement mode.It is designed to provide interface between CMOS logic and loads requiring high voltages and intermediate currents.Each circuit consists of eight channels in a common-source configuration with open drains....

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SeekIC No. : 004286048 Detail

AP0420: Features: SpecificationsDescriptionAP0420 is a kind of monolithic P-channel enhancement mode.It is designed to provide interface between CMOS logic and loads requiring high voltages and intermediate...

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Part Number:
AP0420
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/14

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Description



Features:






Specifications






Description

AP0420 is a kind of monolithic P-channel enhancement mode.It is designed to provide interface between CMOS logic and loads requiring high voltages and intermediate currents.Each circuit consists of eight channels in a common-source configuration with open drains.The typical applications include high impendance/low leakage measurements for bared board testers,high voltage electoluminescent panel drivers,high voltage eletrostatic array drivers and general multi-channel driver array.

There are some features of AP0420 as follows.First is ESD gate protection.The second is 160 V and 400 V capability.Then is interfaces directly to CMOS logic.Next is 8 independent channels.The fifth is low crosstalk between channels.The sixth is low power dissipation.The seventh is pin compatible with industry standard driver array.The last one is free from secondary breakdown.

What comes next is about the absolute maximum ratings of AP0420.The gate-to-source voltage is ±20 V.The operating and storage temperature is from -55 to +150.The soldering temperature is 300.The channel-to-channel crosstalk is 10 mV/V.

The following is about the AP0420 electrical characteristics (@ 25).The minimum BVDSS (drain-to-source breakdown voltage) is -200 V at ID=100A,VGS=0 V.The minimum VGS(th) (gate threshold voltage) is -2 V and the maximum is -5 V at VGS=VDS,ID=-1 mA.The typical VGS(th) (change in VGS(th) with temperature) is -3.5 mV/ at VGS=VDS,ID=-1 mA.The maximum IGSS (gate body leakage) is -10 nA at VGS=±20 V,VDS=0 V.The maximum IDSS (zero gate voltage drain current) is -1A at VGS=0,VDS=Max Rating.The minimum ID(ON) (on-state drain current) is -15 mA at VGS=-10 V,VDS=-25 V.The maximum RDS(ON) (static drain-to-source on-state resistance) is 600 at VGS=-10 V,ID=-10 mA.The typical RDS(ON) (charge in RDS(ON) with temperature) is 0.8%/ at VGS=-10 V,ID=-10 mA.






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