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AOU4N60

MOSFET N-CH 600V 4A TO251

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SeekIC No. : 003432668 Detail

AOU4N60: MOSFET N-CH 600V 4A TO251

AOU4N60 Data Sheet

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US $ .11~.11 / Piece | Get Latest Price
Part Number:
AOU4N60
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~4000
  • Unit Price
  • $.11
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 600V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 4A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 2A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) @ Vgs: 14.5nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 640pF @ 25V
Power - Max: 104W Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TO-251    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 4A
Drain to Source Voltage (Vdss): 600V
Input Capacitance (Ciss) @ Vds: 640pF @ 25V
Gate Charge (Qg) @ Vgs: 14.5nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 104W
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 2A, 10V


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