AOTF4N60

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 4A
Gate Charge (Qg) @ Vgs: 18nC @ 10V
Drain to Source Voltage (Vdss): 600V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 35W
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds: 615pF @ 25V


Features:

V_DS (V) = 700V @ 150°C
I_D = 4A
R_DS(ON) < 2.2 (V_GS = 10V)




Specifications

Parameter	Symbol	AOT4N60	AOTF4N60	Unit
Drain-Source Voltage	VDS	600		V
Gate-Source Voltage	VGS	±30		V
Continuous Drain Current TC=25 TC=100	ID	4 2.5		A
Pulsed Drain Current	IDM	16		A
Avalanche Current	IAR	2.5		A
Repetitive avalanche energy	EAR	94		mJ
Single pulsed avalanche energy	EAS	188		mJ
Peak diode recovery dv/dt	dv/dt	5		V/ns
Power Dissipation	PD	104	35	W
		0.83	0.28	W/
Junction and Storage Temperature Range	TJ,TSTG	-50 to 150
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds	TL	300

Description

The AOT4N60 & AOTF4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low R_DS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.