MOSFET P-CH 60V 5.4A TO220FL
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Series: | - | Manufacturer: | Alpha & Omega Semiconductor Inc | ||
FET Type: | MOSFET P-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 60V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 5.4A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 20A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 2.4V @ 250µA | Gate Charge (Qg) @ Vgs: | 52nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 2953pF @ 30V | ||
Power - Max: | 2.16W | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-3 Full Pack | Supplier Device Package: | TO-220FL |
Parameter |
Symbol |
Maximum |
Units | |
Drain-Source Voltage |
VDS |
-60 |
V | |
Gate-Source Voltage |
VGS |
±20 |
V | |
Continuous Drain Current B,J |
TC=25 |
ID |
-24 |
A |
TC=100 |
-17 | |||
Pulsed Drain Current C |
IDM |
-60 | ||
Continuous Drain |
TA=25 |
IDSM |
-5.4 | |
TA=70 |
-4.3 | |||
Avalanche Current C |
IAR |
-37 | ||
Repetitive avalanche energy L=0.1mH C |
EAR |
68 |
mJ | |
Power Dissipation B |
TC=25 |
PD |
43 |
W |
TC=100 |
21 | |||
Power Dissipation A |
TA=25 |
PDSM |
2.16 | |
TA=70 |
1.38 | |||
Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 175 |
The AOTF409/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the TO220FL package, this device is well suited for high current load applications.AOTF409 and AOTF409L are electrically identical.