MOSFET N-CH 500V 12A TO220F
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Series: | - | Manufacturer: | Alpha & Omega Semiconductor Inc | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 500V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 12A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 520 mOhm @ 6A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4.5V @ 250µA | Gate Charge (Qg) @ Vgs: | 37nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 1633pF @ 25V | ||
Power - Max: | 50W | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-3 Full Pack | Supplier Device Package: | TO-220F |
Parameter | Symbol | AOT12N50 | AOTF12N50 | Unit |
Drain-Source Voltage | VDS | 500 | 500 | V |
Gate-Source Voltage | VGS | ±30 | ±30 | V |
Continuous Drain Current TC=25 TC=100 |
ID | 12 7.6 |
12 7.6 |
A |
Pulsed Drain Current C | IDM | 48 | 48 | A |
Avalanche Current C | IAR | 5.5 | 5.5 | A |
Repetitive avalanche energy C | EAR | 454 | 454 | mJ |
Single pulsed avalanche energy G | EAS | 908 | 908 | mJ |
Peak diode recovery dv/dt | dv/dt | 5 | 5 | V/ns |
Power Dissipation B TC=25 Derate above 25oC |
PD | 208 1.7 |
50 0.4 |
W/ |
Operating Junction and Storage Temperature Range | TJ,TSTG | -50 to 150 | -50 to 150 | |
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds |
TL | 300 | 300 |
The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.