AOT500

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Drain to Source Voltage (Vdss): 33V
Current - Continuous Drain (Id) @ 25° C: 80A
Gate Charge (Qg) @ Vgs: 89nC @ 10V
Supplier Device Package: TO-220
Power - Max: 115W
Manufacturer: Alpha & Omega Semiconductor Inc
Input Capacitance (Ciss) @ Vds: 5500pF @ 15V
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V


Features:

V_DS (V) = Clamped
I^D = 80A (V_GS = 10V)
R_DS(ON) < 5.3 mΩ (V_GS = 10V)




Description

AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET. The built in resistor guarantees proper clamp operation under all circuit conditions, and the MOSFET never goes into avalanche breakdown. Advanced trench technology provides excellent low Rdson, gate charge and body diode characteristics, making this AOT500 ideal for motor and inductive load control applications. Standard Product AOT500 is Pb-free (meets ROHS & Sony 259 specifications).