AOT474

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 9A
Vgs(th) (Max) @ Id: 4V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 75V
Gate Charge (Qg) @ Vgs: 60nC @ 10V
Supplier Device Package: TO-220
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 3370pF @ 30V


Specifications

Parameter		Symbol	AOT474	AOTF474	Units
Drain-Source Voltage		VDS	75		V
Gate-Source Voltage		VGS	±25		V
Continuous Drain Current	TC=25	ID	127	47	A
	TC=100		89	33
Pulsed Drain Current C		IDM	200
Continuous Drain Current	TA=25	IDSM	9	9	A
	TA=70		7	7
Avalanche Current C		IAR	106		A
Repetitive avalanche energy L=0.1mH C		EAR	562		mJ
Power Dissipation B	TC=25	PD	417	57.5	W
	TC=100		208	29
Power Dissipation A	TA=25	PDSM	1.9	1.9	W
	TA=70		1.2	1.2
Junction and Storage Temperature Range		TJ, TSTG	-55 to 175

Description

The AOT(F)474/L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low R_DS(ON) and excellent thermal capability AOT474 is appropriate for high current switching and can endure adverse operating conditions.