AOT430

MOSFET N-CH 75V 80A TO-220

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AOT430 Picture
SeekIC No. : 003431831 Detail

AOT430: MOSFET N-CH 75V 80A TO-220

floor Price/Ceiling Price

Part Number:
AOT430
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 75V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 80A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 30A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 114nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 4700pF @ 30V
Power - Max: 268W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220-3    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Packaging: Tape & Reel (TR)Alternate Packaging
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Mounting Type: Through Hole
Package / Case: TO-220-3
Drain to Source Voltage (Vdss): 75V
Supplier Device Package: TO-220-3
Current - Continuous Drain (Id) @ 25° C: 80A
Gate Charge (Qg) @ Vgs: 114nC @ 10V
Power - Max: 268W
Manufacturer: Alpha & Omega Semiconductor Inc
Input Capacitance (Ciss) @ Vds: 4700pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 30A, 10V


Features:

`VDS (V) = 75V
`ID = 80 A (VGS = 10V)
`RDS(ON) < 11.5m (VGS = 10V)





Pinout






Specifications

Parameter Symbol
Maximum
Units
Drain-Source Voltage VDS
75
V
Gate-Source Voltage VGS
±25
V
Continuous Drain
Current G
TC=25°C ID
80
A
TC=100°C
78
Pulsed Drain Current C IDM
200
Avalanche Current C IAR
45
A
Repetitive avalanche energy L=0.1mH C EAR
300
mJ
Power Dissipation B TC=25°C PD
268
W
TC=100°C
134
Junction and Storage Temperature Range TJ, TSTG
-55 to 175
°C





Description

The AOT430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT430 is Pb-free (meets ROHS & Sony 259 specifications).






Parameters:

Technical/Catalog InformationAOT430
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs11.5 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 4700pF @ 30V
Power - Max268W
PackagingTube
Gate Charge (Qg) @ Vgs114nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AOT430
AOT430
785 1145 5 ND
78511455ND
785-1145-5



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