AOT12N60

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 12A
Gate Charge (Qg) @ Vgs: 50nC @ 10V
Drain to Source Voltage (Vdss): 600V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds: 2100pF @ 25V
Manufacturer: Alpha & Omega Semiconductor Inc
Power - Max: 278W


Features:

V_DS (V) = 700V @ 150°C
I_D = 12A
R_DS(ON) < 0.55 (VGS = 10V)
100% UIS Tested!
100% R g Tested!
Ciss , C oss , C rss Tested!




Specifications

Item		Symbol	AOT12N60	AOTF12N60	Unit
Drain to Source voltage		VDS	600		V
Gate to Source voltage		VGS	±30		V
Continuous Drain Current B	TC=25	ID	12	12*	A
	TC=100		8.1	8.1*
Pulsed Drain Current C		IDM	48
Avalanche Current C		IAR	5.5		A
Repetitive avalanche energy C		EAR	450		mJ
Single pulsed avalanche energy G		EAS	900		mJ
Peak diode recovery dv/dt		dv/dt	5		V/ns
Power Dissipation B	TC=25	PD	223	50	W
	Derate above 25		1.8	0.4	W/
Junction and Storage Temperature Range		TJ, TSTG	-50 to 150
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds		TL	300

Description

The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.