PinoutSpecifications Parameter Symbol Maximum Units Gate-Source VoltageDrain-Source Voltage VDSVGS ±25100 VV Continuous DrainCurrent TC=25TC=100 ID 5233 A Pulsed Drain Current C IDM 110 Continuous DrainCurrent TA=25TA=70 IDSM 79 A Avalanche Current CRepetitive a...
AON6450L: PinoutSpecifications Parameter Symbol Maximum Units Gate-Source VoltageDrain-Source Voltage VDSVGS ±25100 VV Continuous DrainCurrent TC=25TC=100 ID 5233 A Pulsed Drain Curren...
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Parameter | Symbol | Maximum | Units | |
Gate-Source Voltage Drain-Source Voltage |
VDS VGS |
±25 100 |
V V | |
Continuous Drain Current |
TC=25 TC=100 |
ID | 52 33 |
A |
Pulsed Drain Current C | IDM | 110 | ||
Continuous Drain Current |
TA=25 TA=70 |
IDSM | 7 9 |
A |
Avalanche Current C Repetitive avalanche energy L=0.1mH C |
IAR EAR |
41 84 |
A mJ | |
Power Dissipation B | TC=25 TC=100 |
PD | 83 33 |
W |
Power Dissipation A | TA=25 TA=70 |
PDSM | 1.4 2.3 |
W |
Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 |
The AON6450L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.