AON6405L

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Digi-Reel®Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power - Max: 2.5W
Current - Continuous Drain (Id) @ 25° C: 30A
Rds On (Max) @ Id, Vgs: 7 mOhm @ 20A, 10V
Gate Charge (Qg) @ Vgs: 105nC @ 10V
Package / Case: 8-VDFN Exposed Pad
Manufacturer: Alpha & Omega Semiconductor Inc
Supplier Device Package: 8-DFN-EP (5x6)
Input Capacitance (Ciss) @ Vds: 5500pF @ 15V


Features:

`V<sub>DS (V)</sub> = -30V
`I_D = -30A (V_GS = -10V)
`R<sub>DS(ON)</sub> < 7m (V<sub>GS</sub> = -10V)
`R_DS(ON) < 8m (V_GS = -4.5V)

`V<sub>DS (V)</sub> = -30V
`I_D = -30A (V_GS = -10V)
`R<sub>DS(ON)</sub> < 7m (V<sub>GS</sub> = -10V)
`R_DS(ON) < 8m (V_GS = -4.5V)




Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	-30	V
Gate-Source Voltage		VGS	±20	V
Continuous Drain Current G	TC=25	ID	-30	A
	TC=100		-23
Pulsed Drain Current C		IDM	-160
Continuous Drain Current	TA=25	IDSM	-15	A
	TA=70		-12
Avalanche Current C		IAR	-54	A
Repetitive avalanche energy L=0.1mH C		EAR	146	mJ
Power Dissipation B	TC=25	PD	83	W
	TC=100		33
Power Dissipation A	TA=25	PDSM	2.5	W
	TA=70		1.5
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	-30	V
Gate-Source Voltage		VGS	±20	V
Continuous Drain Current G	TC=25	ID	-30	A
	TC=100		-23
Pulsed Drain Current C		IDM	-160
Continuous Drain Current	TA=25	IDSM	-15	A
	TA=70		-12
Avalanche Current C		IAR	-54	A
Repetitive avalanche energy L=0.1mH C		EAR	146	mJ
Power Dissipation B	TC=25	PD	83	W
	TC=100		33
Power Dissipation A	TA=25	PDSM	2.5	W
	TA=70		1.5
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150

Description

The AON6405L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for load switch and battery protection applications.

The AON6405L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for load switch and battery protection applications.