AON4803

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Series: -
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 3.4A
Supplier Device Package: 8-DFN (3x2)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: 8nC @ 4.5V
Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET P-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V
Input Capacitance (Ciss) @ Vds: 745pF @ 10V
Power - Max: 1.7W
Package / Case: 8-WDFN


Features:

`V<sub>DS</sub> (V) = -20V
`I_D = -3.4A (V_GS = -4.5V)
`R<sub>DS(ON)</sub> < 90m (V<sub>GS</sub> = -4.5V)
`R_DS(ON) < 120m (V_GS = -2.5V)
`R_DS(ON) < 165m (V_GS = -1.8V)




Pinout






Specifications

Parameter		Symbol	MOSFET	Units
Drain-Source Voltage		VDS	-20	V
Gate-Source Voltage		VGS	±8	V
Continuous Drain Current A	TA=25°C	ID	-3.4	A
	TA=70°C		-2.7
Pulsed Drain Current B		IDM	-15
Power Dissipation	TA=25°C	PD	1.7	W
	TA=70°C		1.1
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150	°C

Description

The AON4803 uses advanced trench technology to provide excellent R_DS(ON), low gate charge and operation with gate voltage as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Standard Product AON4803 is Pb-free (meets ROHS & Sony 259 specifications).