AON4703

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 1.7W
Current - Continuous Drain (Id) @ 25° C: 3.4A
FET Feature: Diode (Isolated)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) @ Vds: 540pF @ 10V
Gate Charge (Qg) @ Vgs: 6.1nC @ 4.5V
Package / Case: 8-SMD, Flat Lead Exposed Pad
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V
Supplier Device Package: 8-DFN (3x2)


Features:

`V<sub>DS</sub> (V) = -20V
`I_D = -3.4A (V_GS = -4.5V)
`R<sub>DS(ON)</sub> < 90m (V<sub>GS</sub> = -4.5V)
`R_DS(ON) < 120m (V_GS = -2.5V)
`R<sub>DS(ON)</sub> < 160m (V<sub>GS</sub> = -1.8V)
SCHOTTKY
`V_KA (V) = 20V, I_F = 1A, V_F<0.5V@0.5A




Pinout






Specifications

Parameter		Symbol	MOSFET	Schottky	Units
Drain-Source Voltage		VDS	-20		V
Gate-Source Voltage		VGS	±8		V
Continuous Drain Current A	TA=25°C	ID	-3.4		A
	TA=70°C		-2.7
Pulsed Drain Current B		IDM	-15
		VKA		20	V
Continuous Forward Current A	TA=25°C	IF		1.9	A
	TA=70°C			1.2
Pulsed Forward Current B		IFM		7
Power Dissipation	TA=25°C	PD	1.7	0.96	W
	TA=70°C		1.1	0.62
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150	-55 to 150	°C

Description

The AON4703 uses advanced trench technology to provide excellent R _DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AON4703 is Pb-free (meets ROHS & Sony 259 specifications). AON4703L is a Green Product ordering option. AON4703 and AON4703L are electrically identical.

Parameters:

Technical/Catalog Information	AON4703
Vendor	Alpha & Omega Semiconductor Inc
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.4A
Rds On (Max) @ Id, Vgs	90 mOhm @ 3.4A, 4.5V
Input Capacitance (Ciss) @ Vds	540pF @ 10V
Power - Max	1.7W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	6.1nC @ 4.5V
Package / Case	8-DFN
FET Feature	Diode (Isolated)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AON4703 AON4703 785 1133 2 ND 78511332ND 785-1133-2