Features: `VDS (V) = -20V`ID = -3.4A (VGS = -4.5V)`RDS(ON) < 90m (VGS = -4.5V)`RDS(ON) < 120m (VGS = -2.5V)`RDS(ON) < 160m (VGS = -1.8V)SCHOTTKY`VDS (V) = 20V, IF = 1A, VF<0.5V@0.5APinoutSpecifications Parameter Symbol MOSFET Schottky Units Drain-Source Voltage VDS ...
AON4701: Features: `VDS (V) = -20V`ID = -3.4A (VGS = -4.5V)`RDS(ON) < 90m (VGS = -4.5V)`RDS(ON) < 120m (VGS = -2.5V)`RDS(ON) < 160m (VGS = -1.8V)SCHOTTKY`VDS (V) = 20V, IF = 1A, VF<0.5V@0.5APinou...
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Parameter | Symbol |
MOSFET |
Schottky |
Units | |
Drain-Source Voltage |
VDS |
-20 |
V | ||
Gate-Source Voltage |
VGS |
±8 |
V | ||
Continuous Drain Current A | TA=25°C |
ID |
-3.4 |
A | |
TA=70°C |
-2.7 | ||||
Pulsed Drain Current B |
IDM |
-15 | |||
VKA |
20 |
V | |||
Continuous Forward Current A | TA=25°C |
IF |
1.9 |
A | |
TA=70°C |
1.2 | ||||
Pulsed Forward Current B |
IFM |
7 | |||
Power Dissipation | TA=25°C |
PD |
1.7 |
0.96 |
W |
TA=70°C |
1.1 |
0.62 | |||
Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 150 |
-55 to 150 |
°C |
The AON4701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AON4701 is Pb-free (meets ROHS & Sony 259 specifications). AON4701L is a Green Product ordering option. AON4701 and AON4701L are electrically identical.