AON2701

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1V @ 250µA
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 3A
Input Capacitance (Ciss) @ Vds: 700pF @ 10V
Package / Case: 6-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
Gate Charge (Qg) @ Vgs: 6.5nC @ 4.5V
Manufacturer: Alpha & Omega Semiconductor Inc
Supplier Device Package: 6-DFN-EP (2x2)
Power - Max: 1.5W, 1.45W


Features:

V_{DS (V)} = -20V
I_D = -3A (V_GS = -4.5V)
R_DS(ON) < 120mW (V_GS = -4.5V)
R_DS(ON) < 160mW (V_GS = -2.5V)
R_DS(ON) < 200mW (V_GS = -1.8V)
SCHOTTKY
V_{KA (V)} = 20V, I_F = 2A, V_F<0.45V@1A




Specifications

Item		Symbol	MOSFET	Schottky	Units
Drain-Source Voltage		VDS	-20		V
Gate-Source Voltage		VGS	±8		V
Continuous Drain Current A	TA=25	ID	-3		A
	TA=70		-2.3
Pulsed Drain Current B		IDM	-15
Schottky reverse voltage		VKA		20	mJ
Continuous Forward Current A	TA=25	IF		2.5	A
	TA=70			1.5
Pulsed Forward Current B		IFM		15
Power Dissipation B	TA=25	PD	1.5	1.45	W
	TA=70		0.95	0.92
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150	-55 to 150

Description

The AON2701/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.
AON2701 and AON2701L are electrically identical.
-RoHS Compliant
-Halogen Free*