AOL1712

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 2.1W
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 16A
Gate Charge (Qg) @ Vgs: 95nC @ 10V
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Series: SRFET™
Package / Case: 3-Non Standard SMD
Supplier Device Package: UltraSO-8?
Input Capacitance (Ciss) @ Vds: 5120pF @ 15V


Features:

V_DS (V) = 30V
I_D =65A (V_GS = 10V)
R_DS(ON) < 4.2m (V_GS = 10V)
R_DS(ON) < 5.5m (V_GS = 4.5V)




Specifications

Symbol	Characteristic	Value	Unit
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-Source Voltage	±12	V
ID	Continuous Drain Current (TC=25)B, H	65	A
	Continuous Drain Current (TC=100)B, H	65	A
IDM	Drain Current-Pulsed C	80	A
IDSM	Continuous Drain Current A TA=70 TA=25	16	A
		12	A
IAR	Avalanche Current	38	A
EAR	Repetitive Avalanche Energy	217	mJ
PD	Power Dissipation B TC=100 TC=25	100 50	W
PDSM	Power Dissipation A TA=70 TA=25	2.1 1.3	W
TJ,TSTG	Junction and Storage Temperature Range	-55 to 175

A: The value of RKJA is measured with the device in a still air environment with T A=25. The power dissipation PDSM and current rating IDSM are based on T_J(MAX)=150, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on T_J(MAX)=175, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T _J(MAX)=175.
D. The RKJA is the sum of the thermal impedence from junction to case R KJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T _J(MAX)=175 The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T _A=25.
H. The maximum current rating is limited by bond-wires.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)

Description

SRFET ^TM AOL1712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R_DS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
-RoHS Compliant
-Halogen and Antimony Free Green Device*