AOI472A

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 25V
Gate Charge (Qg) @ Vgs: 40nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 17A
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: *
Manufacturer: Alpha & Omega Semiconductor Inc
Series: SDMOS™
Input Capacitance (Ciss) @ Vds: 2200pF @ 12.5V
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 30A, 10V


Features:

100% UIS Tested!
100% Rg Tested!
I_D = 50A (V_GS = 10V)

R_DS(ON) < 5.2m(V_GS = 10V)

R_DS(ON) < 9.5m (V_GS = 4.5V)

V_{DS (V)} =25V




Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	25	V
Gate-Source Voltage		VGS	±20	A
Continuous Drain Current G	TC=25°C	ID	50	A
	TC=100°C		39
Pulsed Drain Current C		IDM	100
Continuous Drain Current	TA=25°C	IDSM	17	A
	TA=70°C		13
Avalanche Current C		IAR	50	A
Repetitive avalanche energy L=50uH C		EAR	63	mJ
Power Dissipation B	TC=25°C	PD	50	W
	TC=100°C		25
Power Dissipation A	TA=25°C	PDSM	2.5
	TA=70°C		1.6
Junction and Storage Temperature Ran		TJ, TSTG	-55 to 175

Description

- RoHS Compliant
- Halogen Free
The AOI472A is fabricated with SDMOS^TM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.