Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 2.3W
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) @ Vgs: 18nC @ 10V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 11A
Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V
Supplier Device Package: TO-252
Input Capacitance (Ciss) @ Vds: 770pF @ 15V
Manufacturer: Alpha & Omega Semiconductor Inc
Features: VDS (V) =30V
ID = 57A (VGS = 10V)
RDS(ON) < 9m(VGS = 10V)
RDS(ON) < 14m(VGS = 4.5V)
100% UIS Tested!
100% R g Tested!Specifications
| Parameter |
Symbol |
Maximum |
Units |
| Drain-Source Voltage |
VDS |
30 |
V |
| Gate-Source Voltage |
VGS |
±20 |
V |
Continuous Drain
Current |
TC =25 |
ID |
57 |
A |
| TC =100 |
40 |
| Pulsed Drain Current C |
IDM |
100 |
Continuous Drain
Current |
TA=25 |
IDSM |
11 |
A |
| TA=70 |
9 |
| Avalanche Current C |
IAR |
20 |
A |
| Repetitive avalanche energy L=0.1mH C |
EAR |
20 |
mJ |
| Power Dissipation B |
TC =25 |
PD |
50 |
W |
| TC=100 |
25 |
| Power Dissipation A |
TA=25 |
PDSM |
2.3 |
W |
| TA=70 |
1.5 |
| Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 175 |
|
DescriptionThe AOD496A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.
- RoHS Compliant
- Halogen Free
AOD496A Data Sheet
