AOD472A

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drain to Source Voltage (Vdss): 25V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Gate Charge (Qg) @ Vgs: 40nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 55A
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Series: SDMOS™
Input Capacitance (Ciss) @ Vds: 2200pF @ 12.5V
Power - Max: 53.5W


Features:

V_DS (V) = 25V
I_D = 55A (V_GS = 10V)
R_DS(ON) < 5.5m (V_GS = 10V)
R_DS(ON) < 9.5m (V_GS = 4.5V)




Specifications

Parameter	Symbol	LIMIT		Unit
Drain-Source Voltage	VDS	25		V
Gate-Source Voltage	VGS	±20		V
Continuous Drain Current TC=25 TC=100	ID	55 43		A
Pulsed Drain Current	IDM	100		A
Pulsed Forward Diode Current	ISM	100		A
Avalanche Current	IAR	50		A
Repetitive avalanche energy	EAR	63		mJ
Power Dissipation TC=25°C TC=100°C	PD	50 25		W
Power Dissipation TA=70°C TA=25°C	PDSM	2.5 1.6		W
Junction and Storage Temperature Range	TJ,TSTG	-55 to 150

Description

The AOD472A/L is fabricated with SDMOS^TM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.

AOD472A and AOD472AL are electrically identical.
-RoHS Compliant
-AOD472AL is Halogen Free