AOD472

MOSFET N-CH 25V 55A TO-252

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SeekIC No. : 003430934 Detail

AOD472: MOSFET N-CH 25V 55A TO-252

floor Price/Ceiling Price

US $ .18~.46 / Piece | Get Latest Price
Part Number:
AOD472
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.46
  • $.35
  • $.31
  • $.27
  • $.23
  • $.18
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/3

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 55A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) @ Vgs: 50nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2460pF @ 12.5V
Power - Max: 150W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drain to Source Voltage (Vdss): 25V
Gate Charge (Qg) @ Vgs: 50nC @ 10V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Current - Continuous Drain (Id) @ 25° C: 55A
Power - Max: 150W
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 2460pF @ 12.5V


Features:

·VDS (V) = 25V
·ID = 50A (VGS = 10V)
·RDS(ON) <6 mΩ (VGS = 10V)
·RDS(ON) <9.5 mΩ (VGS = 4.5V)





Specifications

Parameter
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
25
±20
V
V
Continuous Drain
Current B
TC=25°C
TC=100°C
ID
50
50
A
Pulsed Drain CurrentC
IDM
150
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
IAR
EAR
30
135
A
mJ
Power Dissipation B
TC=25°C
TC=100°C

PD
50
25
W
Power Dissipation A TA=25°C
TA=70°C
PDSM
3
2.1
W
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
°C





Description

The AOD472 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD472 is Pb-free (meets ROHS & Sony 259 specifications). AOD472L is a Green Product ordering option. AOD472 and AOD472L are electrically identical.






Parameters:

Technical/Catalog InformationAOD472
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C55A
Rds On (Max) @ Id, Vgs6 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 2460pF @ 12.5V
Power - Max150W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs50nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AOD472
AOD472
785 1111 2 ND
78511112ND
785-1111-2



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