MOSFET N-CH 40V 20A DPAK
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Series: | - | Manufacturer: | Alpha & Omega Semiconductor Inc | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 15.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 40V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 20A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 12A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 3V @ 250µA | Gate Charge (Qg) @ Vgs: | 10.8nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 650pF @ 20V | ||
Power - Max: | 37W | Mounting Type: | Surface Mount | ||
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 | Supplier Device Package: | TO-252, (D-Pak) |
Parameter |
Symbol |
Maximum |
Units | |
Drain-Source Voltage |
VDS |
40 |
V | |
Gate-Source Voltage |
VGS |
±20 |
V | |
Continuous Drain Current B,H |
TC=25 |
ID |
12 |
A |
TC=100 |
10 | |||
Pulsed Drain Current C |
IDM |
40 | ||
Continuous Drain Current B |
TA=25 |
IDSM |
14 | |
TA=70 |
9.8 | |||
Power Dissipation B | TC=25 |
PD |
37 |
W |
TC=100 |
18 | |||
Power Dissipation A | TA=25 |
PDSM |
2.5 | |
TA=70 |
1.6 | |||
Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 150 |
The AOD454A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.
-RoHS Compliant
-Halogen Free*