AOD444

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Gate Charge (Qg) @ Vgs: 10nC @ 10V
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25° C: 12A
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Power - Max: 20W
Rds On (Max) @ Id, Vgs: 60 mOhm @ 12A, 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Input Capacitance (Ciss) @ Vds: 540pF @ 30V


Features:

V_DS (V) = 60V
I_D = 12 A
R_{DS(ON) <} 60 m (V_GS = 10V)
R_DS(ON) < 85 m (V_GS = 4.5V)




Pinout






Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	60	V
Gate-Source Voltage		VGS	±20	V
Continuous Drain Current G	TC=25°C G	ID	12	A
	TC=100°C B		12
Pulsed Drain CurrentC		IDM	30
Avalanche Current C		IAR	12	A
Repetitive avalanche energy L=0.1mH C		EAR	23	mJ
Power Dissipation B	TC=25°C	PD	20	W
	TC=100°C		10
Power Dissipation A	TA=25°C	PDSM	2	W
	TA=70°C		1.3
Junction and Storage Temperature Range		TJ, TSTG	-55 to 175	°C

Description

The AOD444 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. AOD444L (Green Product) is offered in a lead-free package.

The AOD444 is N-channel enhancement mode field effect transistor. It uses advanced trench technology and can designed to provide excellent RDS(ON) with low gate charge. The device is suitable for use in PWM, load switching and general purpose applications.

The features of AOD444 can be summarized as:(1)VDS (V) = 60V; (2)ID = 12A; (3)RDS(ON) < 60m (VGS=10V); (4)RDS(ON) < 85m (VGS=4.5V).

The absolute maximum ratings of the AOD444 can be summarized as:(1)drain-source voltage:60V;(2)gate-source voltage:±20V;(3)continuous drain current:12A;(4)pulsed drain current:30A;(5)avalanche current:12A;(6)repetitive avalanche energy L=0.1mH:23mJ;(7)power dissipation:Tc=25..20W, Tc=100..10W, Ta=25..2W, Ta=70..1.3W;(8)junction and storage temperature range:-55 to 175.

If you want to know more information such as the electrical characteristics about the AOD444, please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	AOD444
Vendor	Alpha & Omega Semiconductor Inc (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	60 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	540pF @ 30V
Power - Max	20W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	10nC @ 10V
Package / Case	DPak,SC-63,TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AOD444 AOD444 785 1108 1 ND 78511081ND 785-1108-1