Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 2.5W
Gate Charge (Qg) @ Vgs: 38nC @ 10V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 50A
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 17 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds: 2200pF @ 15V
Features: ·VDS (V) = -30V
·ID = -20A (VGS = -10V)
·RDS(ON) < 17mW (VGS = -10V)
·RDS(ON) < 35mW (VGS = -5V)
ESD Protected!
100% Rg Tested!
Specifications
| Parameter |
Symbol |
Maximum |
Units |
| Drain-Source Voltage |
VDS |
-30 |
V |
| Gate-Source Voltage |
VGS |
±25 |
V |
Continuous Drain
CurrentF |
TC =25 |
ID |
-40 |
A |
| TC =100 |
-30 |
| Pulsed Drain Current C |
IDM |
-70 |
Continuous Drain
Current |
TA=25 |
IDSM |
-9 |
A |
| TA=70 |
-7 |
| Power Dissipation B |
TC =25 |
PD |
50 |
W |
| TC=100 |
25 |
| Power Dissipation A |
TA=25 |
PDSM |
2.3 |
W |
| TA=70 |
1.5 |
| Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 175 |
|
DescriptionThe AOD425 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AOD425 is ESD protected.
-RoHS Compliant
-Halogen Free*
AOD425 Data Sheet
