AOD4185

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 40V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Current - Continuous Drain (Id) @ 25° C: 50A
Gate Charge (Qg) @ Vgs: 55nC @ 10V
Power - Max: 62.5W
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds: 2550pF @ 20V


Features:

V_{DS (V)} = -40V
I_D = -40A (VGS = -10V)
R_DS(ON) < 15mW (V_GS = -10V)
R_DS(ON) < 20mW (V_GS = -4.5V)

Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	-40	V
Gate-Source Voltage		VGS	±20	V
Continuous Drain Current B,H	TC=25	ID	-40	A
	TC=100		-31
Pulsed Drain Current C		IDM	-115
Avalanche Current C		IAR	-42
Repetitive avalanche energy L=0.1mH C		EAR	88	mJ
Power Dissipation B	TC=25	PD	62.5	W
	TC=100		31
Power Dissipation A	TA=25	PDSM	2.5
	TA=70		1.6
Junction and Storage Temperature Range		TJ, TSTG	-55 to 175

Description

The AOD4185 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current applications.

-RoHS Compliant
-Halogen Free*