AOD414L Selling Leads, Price trend, AOD414L DataSheet download, circuit diagram from SeekIC.com

Features: VDS (V) = 30VID = 85ARDS(ON) < 5.2m (VGS = 10V)RDS(ON) < 7.0m (VGS = 4.5V)Specifications Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain CurrentB,G TC=25°C ID 85 A TC=100°C 73 Pulsed Dra...

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SeekIC No. : 004285897 Detail

AOD414L: Features: VDS (V) = 30VID = 85ARDS(ON) < 5.2m (VGS = 10V)RDS(ON) < 7.0m (VGS = 4.5V)Specifications Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Vol...

AOD414L Data Sheet

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Part Number:: AOD414L
Supply Ability:: 5000

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1~5000

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Upload time: 2025/3/13

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Features: `V DS (V) = 30V`ID = 10 A (VGS = 10V)`R DS(ON) < 30 m (VGS = 10V)`R DS(ON) < 36 m ...
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Features: `V DS (V) = 30V`ID = 18 A (VGS = 20V)`R DS(ON) < 15 m (VGS = 20V)`R DS(ON) < 18 m ...
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US $.3 - .68 / Piece

MOSFET P-CH -30V -85A TO-252

Product Details

Description

Features:

V_DS(V) = 30V
I_D = 85A
R_DS(ON) < 5.2m (V_GS = 10V)
R_DS(ON) < 7.0m (V_GS = 4.5V)

Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		V_DS	30	V
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Current^B,G	T_C=25°C	I_D	85	A
	T_C=100°C		73
Pulsed Drain Current		I_DM	200
Avalanche Current ^C		I_AR	30	A
Repetitive avalanche energy L=0.1mH ^C		E_AR	140	mJ
Power Dissipation ^B	T_C=25°C	P_D	100	W
	T_C=100°C		50
Power Dissipation ^A	T_A=25°C	P_DSM	2.5	W
	T_A=70°C		1.6
Junction and Storage Temperature Range		T_J, T_STG	-55 to 175	°C

Description

The AOD414L uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. AOD414L ( Green Product ) is offered in a lead-free package.

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AOD414L

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