Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs: 21nC @ 10V
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25° C: 12A
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Power - Max: 50W
Rds On (Max) @ Id, Vgs: 44 mOhm @ 12A, 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Input Capacitance (Ciss) @ Vds: 1125pF @ 20V
Features: VDS (V) = -40V
ID = -12A (VGS = -10V)
RDS(ON) < 44mW (VGS = -10V)
RDS(ON) < 66mW (VGS = -4.5V)
100% UIS Tested!
100% Rg Tested!Specifications
|
Parameter |
Symbol |
Maximumb |
Units |
|
Drain-Source Voltage |
VDS |
-40 |
V |
|
Gate-Source Voltage |
VGS |
±20 |
V |
|
Continuous Drain
Current B,H |
TC=25 |
ID |
-12 |
A |
|
TC=100 |
-9 |
|
Pulsed Drain Current C |
IDM |
-30 |
|
Avalanche Current C |
IAR |
-20 |
|
Repetitive avalanche energy L=0.1mH C |
EAR |
20 |
mJ |
|
Power Dissipation B |
TC=25 |
PD |
50 |
W |
|
TC=100 |
25 |
|
Power Dissipation A |
TA=25 |
PDSM |
2.5 |
|
TA=70 |
1.6 |
|
Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 175 |
|
DescriptionThe AOD413A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.
-RoHS Compliant
-Halogen Free*
AOD413A Data Sheet
