AOD4136

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 2.1W
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 25V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 25A
Supplier Device Package: TO-252
Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Series: SDMOS™
Gate Charge (Qg) @ Vgs: 16.8nC @ 10V
Input Capacitance (Ciss) @ Vds: 734pF @ 12.5V


Features:

V_DS (V) = 25V
I_D = 25A (V_GS = 10V)
R_DS(ON) < 11mW (V_GS = 10V)
R_DS(ON) <19mW (V_GS = 4.5V)




Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	25	V
Gate-Source Voltage		VGS	±20	V
Continuous Drain Current B,H	TC=25	ID	25	A
	TC=100		20
Pulsed Drain Current C		IDM	100
Avalanche Current C		IAR	17
Repetitive avalanche energy L=0.1mH C		EAR	15	mJ
Power Dissipation B	TC=25	PD	30	W
	TC=100		15
Power Dissipation A	TA=25	PDSM	2.1
	TA=70		1.3
Junction and Storage Temperature Range		TJ, TSTG	-55 to 175

Description

The AOD4136 is fabricated with SDMOS^TM trench technology that combines excellent R_DS(ON) with low gate charge. The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for both DC-DC and load switch applications.

-RoHS Compliant
-Halogen Free*