Features: VDS (V) = 25VID = 50A (VGS = 10V)RDS(ON) < 6.5m (VGS = 20V)RDS(ON) < 9m (VGS = 12V)RDS(ON) < 12m (VGS = 10V)Specifications Parameter Symbol Maximium Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±30 V Continuous DrainCurrent ...
AOD4100: Features: VDS (V) = 25VID = 50A (VGS = 10V)RDS(ON) < 6.5m (VGS = 20V)RDS(ON) < 9m (VGS = 12V)RDS(ON) < 12m (VGS = 10V)Specifications Parameter Symbol Maximium Unit Drain-So...
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Parameter |
Symbol |
Maximium |
Unit | |||
Drain-Source Voltage |
VDS |
25 |
V | |||
Gate-Source Voltage |
VGS |
±30 |
V | |||
Continuous Drain Current B |
TC=25G |
ID |
50 |
A | ||
TC=100 |
49 | |||||
Pulsed Drain Current C |
IDM |
120 | ||||
Avalanche Current C |
IAR |
28 |
A | |||
Repetitive avalanche energy L=0.3mH C |
EAR |
118 |
mJ | |||
Power Dissipation B | TC=25 |
PD |
50 |
W
| ||
TC=100 |
25 | |||||
Power Dissipation A | TA=25 |
PDSM |
6.5 |
W
| ||
TA=70 |
4.2 | |||||
Junction and Storage Temperature Range |
TJ, TSTG |
-50 to 150 |
||||
Thermal Characteristics | ||||||
Parameter | Symbol | Typ | Max | Units | ||
Maximum Junction-to-Ambient A | t 10s | RqJA | 16 | 19 | /W | |
Maximum Junction-to-Ambient A | Steady-State | 43 | 52 | /W | ||
Maximum Junction-to-Case D | Steady-State | RqJC | 2 | 3 | /W |
The AOD4100 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a High side switch in CPU core power conversion.