AOD409

MOSFET P-CH -60V -26A TO-252

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SeekIC No. : 003430946 Detail

AOD409: MOSFET P-CH -60V -26A TO-252

floor Price/Ceiling Price

US $ .23~.58 / Piece | Get Latest Price
Part Number:
AOD409
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.58
  • $.45
  • $.4
  • $.34
  • $.29
  • $.23
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 26A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 40 mOhm @ 20A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) @ Vgs: 54nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3600pF @ 30V
Power - Max: 60W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak)    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Digi-Reel®Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 60V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power - Max: 60W
Current - Continuous Drain (Id) @ 25° C: 26A
Gate Charge (Qg) @ Vgs: 54nC @ 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 40 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds: 3600pF @ 30V


Features:

`VDS (V) = -60V
`ID = -26A (VGS = -10V)
`RDS(ON) < 40m (VGS = -10V) @ -20A
`RDS(ON) < 55m (VGS = -4.5V)





Pinout

  Connection Diagram




Specifications

Parameter Symbol
Maximum
Units
Drain-Source Voltage
VDS
-60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain
Current G
TA=25°C
ID
-26
A
TA=100°C
-18
Pulsed Drain Current C
IDM
-60
Avalanche Current C
IAR
-26
A
Repetitive avalanche energy L=0.3mH C
EAR
134
mJ
Power Dissipation B TA=25°C
PD
60
W
TA=100°C
30
Power Dissipation A TA=25°C
PDSM
2.5
W
TA=70°C
1.6
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
°C





Description

The AOD409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD409 is Pb-free (meets ROHS & Sony 259 specifications). AOD409L is a Green Product ordering option. AOD409 and AOD409L are electrically identical.






Parameters:

Technical/Catalog InformationAOD409
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C26A
Rds On (Max) @ Id, Vgs40 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 30V
Power - Max60W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs54nC @ 10V
Package / CaseDPak,SC-63,TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AOD409
AOD409
785 1103 2 ND
78511032ND
785-1103-2



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