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Features: `V DS (V) = 30V`ID = 85A (VGS = 10V)`R S(ON) < 7m (VGS = 10V)`R DS(ON) < 8m (VGS = 4.5V)Specifications Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous DrainCurrent B,G TC=25°C G ID ...

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SeekIC No. : 004285881 Detail

AOD404: Features: `V DS (V) = 30V`ID = 85A (VGS = 10V)`R S(ON) < 7m (VGS = 10V)`R DS(ON) < 8m (VGS = 4.5V)Specifications Parameter Symbol Maximum Units Drain-Source Voltage VDS ...

AOD404 Data Sheet

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Part Number:: AOD404
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/22

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Features: `V DS (V) = 30V`ID = 10 A (VGS = 10V)`R DS(ON) < 30 m (VGS = 10V)`R DS(ON) < 36 m ...
AOD402 evaluate
Features: `V DS (V) = 30V`ID = 18 A (VGS = 20V)`R DS(ON) < 15 m (VGS = 20V)`R DS(ON) < 18 m ...
AOD403 evaluate
US $.3 - .68 / Piece

MOSFET P-CH -30V -85A TO-252

Product Details

Description

Features:

`V _{DS (V)} = 30V
`I_D = 85A (V_GS = 10V)
`R _S(ON) < 7m (V_GS = 10V)
`R _DS(ON) < 8m (V_GS = 4.5V)

Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		V_DS	30	V
Gate-Source Voltage		V_GS	±12	V
Continuous Drain Current B,G	TC=25°C G	I_D	85	A
Continuous Drain Current B,G	TC=100°C B	I_D	65	A
Pulsed Drain Current C		I_DM	200	A
Avalanche Current C		I_AR	30	A
Repetitive avalanche energy L=0.3mH C		E_AR	120	mJ
Power Dissipation B	TC=25°C	P_D	100	W
Power Dissipation B	TC=100°C	P_D	50	W
Power Dissipation A	TA=25°C	P_DSM	2.5	W
Power Dissipation A	TA=70°C	P_DSM	1.6	W
Junction and Storage Temperature Range		T_J, T_STG	-55 to 175	°C

Description

The AOD404 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD404 is Pb-free (meets ROHS & Sony 259 specifications). AOD404L is a Green Product ordering option. AOD404 and AOD404L are electrically identical.

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AOD404

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