AOB440

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Packaging: Cut Tape (CT)
Power - Max: 150W
Current - Continuous Drain (Id) @ 25° C: 75A
Gate Charge (Qg) @ Vgs: 88nC @ 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 4560pF @ 30V


Features:

`V<sub>DS</sub> (V) = 60V
`I_D = 75 A (V_GS = 10V)
`R_DS(ON) < 7.5m (V_GS = 10V)




Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	60	V
Gate-Source Voltage		VGS	±20	V
Continuous Drain CurrentG	TC=25	ID	75	A
	TC=100		75
Pulsed Drain Current C		IDM	150
Avalanche Current C		IAR	80	A
Repetitive avalanche energy L=0.1mH C		EAR	320	mJ
Power Dissipation B	TC=25	PD	150	W
	TC=100		75
Junction and Storage Temperature Range		TJ, TSTG	-55 to 175

Description

The AOB440 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. Standard Product AOB440 is Pb-free (meets ROHS & Sony 259 specifications).