FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Digi-Reel®Alternate Packaging
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) @ Vgs: 24nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 45A
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Power - Max: 150W
Rds On (Max) @ Id, Vgs: 36 mOhm @ 20A, 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Series: SDMOS™
Input Capacitance (Ciss) @ Vds: 1450pF @ 50V
Features: ·VDS (V) = 30V
·ID = 110A (VGS = 10V)
·RDS(ON) < 4.5mΩ (VGS = 10V) @ 30A
·RDS(ON) < 6.5mΩ (VGS = 4.5V) @ 30ASpecifications
|
Parameter |
Symbol |
Maximum |
Units |
Drain-Source Voltage
Gate-Source Voltage |
VDS
VGS |
30
±20 |
V
V |
Continuous Drain
Current B.G |
TC=25°C G
TC=100°C B |
ID |
110
78 |
A |
| Pulsed Drain CurrentC |
IDM |
200 |
Avalanche Current C
Repetitive avalanche energy L=0.3mH C |
IAR
EAR |
140
30 |
A
mJ |
Power Dissipation B
|
TC=25°C
TC=100°C |
PD
|
100
50 |
W |
| Power Dissipation A |
TA=25°C
TA=70°C |
PDSM |
3.1
2 |
W |
| Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 175 |
°C |
DescriptionThe AOB416 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOB416 is Pbfree (meets ROHS & Sony 259 specifications). AOB416L is a Green Product ordering option. AOB416 and AOB416L are electrically identical.
AOB416 Data Sheet
