AOB414

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) @ Vgs: 34nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Power - Max: 150W
Current - Continuous Drain (Id) @ 25° C: 51A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Series: SDMOS™
Input Capacitance (Ciss) @ Vds: 2200pF @ 50V


Features:

VD_S (V) = 30V
I_D = 110A
R_DS(ON) < 4.2m (V_GS = 10V)
R_DS(ON) < 4.8m (V_GS = 4.5V)




Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	30	V
Gate-Source Voltage		VGS	±12	V
Continuous Drain Current B,G	TC=25°C G	ID	110	A
	TC=100°C B		80
Pulsed Drain Current		IDM	200
Avalanche Current C		IAR	30	A
Repetitive avalanche energy L=0.1mH C		EAR	140	mJ
Power Dissipation B	TC=25°C	PD	100	W
	TC=100°C		50
Power Dissipation A	TA=25°C	PDSM	3.1	W
	TA=70°C		2
Junction and Storage Temperature Range		TJ, TSTG	-55 to 175	°C

Description

The AOB414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. AOB414L ( Green Product ) is offered in a lead-free package.