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AO4900A

Features: ·VDS (V) = 30V·ID = 6.9A (VGS = 10V)·RDS(ON) < 27mΩ (VGS = 10V)·RDS(ON) < 32mΩ (VGS = 4.5V)·RDS(ON) < 50mΩ (VGS = 2.5V)PinoutSpecifications Parameter Symbol MOSFET Schottky Units Drain-Source VoltageGate-Source Voltage VDSVGS 30±12 ...

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SeekIC No. : 004285818 Detail

AO4900A: Features: ·VDS (V) = 30V·ID = 6.9A (VGS = 10V)·RDS(ON) < 27mΩ (VGS = 10V)·RDS(ON) < 32mΩ (VGS = 4.5V)·RDS(ON) < 50mΩ (VGS = 2.5V)PinoutSpecifications Parameter S...

AO4900A Data Sheet

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Part Number:
AO4900A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·VDS (V) = 30V
·ID = 6.9A (VGS = 10V)
·RDS(ON) < 27mΩ (VGS = 10V)
·RDS(ON) < 32mΩ (VGS = 4.5V)
·RDS(ON) < 50mΩ (VGS = 2.5V)


Pinout

Connection Diagram


Specifications

Parameter
Symbol
MOSFET
Schottky
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
±12
  
V
V
Continuous Drain Current A TA=25°C
TA=70°C
ID
6.9
5.8
  
A
Pulsed Drain Current B
IDM
40
  
Schottky reverse voltage
VKA
30
V
Continuous Forward Current A
 TA=25°C
TA=70°C

IF
3
2
A

Pulsed Forward Current B

IFM
40
Power Dissipation TA=25°C
TA=70°C
PD
2
1.44
2
1.44
W
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
-55 to 150
°C



Description

The AO4900A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4900A is Pbfree (meets ROHS & Sony 259 specifications). AO4900AL is a Green Product ordering option. AO4900A and AO4900AL are electrically identical.




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