Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25° C: 20A
Power - Max: 3.1W
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
Supplier Device Package: 8-SOIC
FET Type: MOSFET N-Channel, Schottky, Metal Oxide
Gate Charge (Qg) @ Vgs: 73nC @ 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Series: SRFET™
Input Capacitance (Ciss) @ Vds: 3800pF @ 15V
Features: VDS (V) = 30V
ID =18A (VGS = 10V)
RDS(ON) < 6mΩ (VGS = 10V)
RDS(ON) < 7mΩ (VGS = 4.5V)Pinout
Specifications
| Parameter |
Symbol |
Maximum |
Units |
Gate-Source Voltage
Drain-Source Voltage |
VDS
VGS |
30
±12 |
V |
Continuous Drain
Current AF |
TA=25 |
IDSM |
18 |
A |
| TA=70 |
14 |
Avalanche Current B
Repetitive avalanche energy L=0.3mH B
Pulsed Drain Current B |
IDM
IAR
EAR |
80
42
265 |
A
mJ |
| Power Dissipation |
TA=25 |
PDSM |
3.1 |
W |
| TA=70 |
2.0 |
| Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 150 |
|
DescriptionSRFET TM The AO4726/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS(ON) and low gate charge.
This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. AO4726 and AO4726L are electrically identical.
-RoHS Compliant
-AO4726L is Halogen Free
AO4726 Data Sheet
