Features: (VGS = 10V)(VGS = 10V)(VGS = 4.5V)ID = 18ARDS(ON) < 5.5mRDS(ON) < 7.5mVDS (V) = 30VSpecifications Item Symbol Maximum Unit Drain to Source voltage VDS 30 V Gate to Source voltage VGS ±20 V Continuous DrainCurrent TC=25 ID 18 A T...
AO4498L: Features: (VGS = 10V)(VGS = 10V)(VGS = 4.5V)ID = 18ARDS(ON) < 5.5mRDS(ON) < 7.5mVDS (V) = 30VSpecifications Item Symbol Maximum Unit Drain to Source voltage VDS 30 V ...
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Item |
Symbol |
Maximum |
Unit | |
Drain to Source voltage |
VDS |
30 |
V | |
Gate to Source voltage |
VGS |
±20 |
V | |
Continuous Drain Current |
TC=25 |
ID |
18 |
A |
TC=100 |
14 | |||
Pulsed Drain Current C |
IDM |
120 | ||
Avalanche Current C |
IAR |
42 |
A | |
Repetitive avalanche energy L=0.1mH C |
EAR |
88 |
mJ | |
Power Dissipation B | TC=25 |
PD |
3.1 |
W |
TC=70 |
2 | |||
Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 150 |
The AO4498L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.