AO4490

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 2.8W
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25° C: 16A
Gate Charge (Qg) @ Vgs: 48nC @ 10V
Supplier Device Package: 8-SOIC
Input Capacitance (Ciss) @ Vds: 2170pF @ 15V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 260µA


Features:

`V<sub>DS (V)</sub> = 30V
`I_D = 16A (VGS = 10V)
`R<sub>DS(ON)</sub> < 7.2m (V<sub>GS</sub> = 10V)
`R_DS(ON) < 10m (V_GS = 4.5V)
`ESD protected




Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	30	V
Gate-Source Voltage		VGS	±20	V
Continuous Drain Current AF	TA=25	ID	16	A
	TA=70		13
Pulsed Drain Current B		IDM	120
Avalanche Current G		IAR	30	A
Repetitive avalanche energy L=0.3mH G		EAR	135	mJ
Power Dissipation	TA=25	PD	2.8	W
	TA=70		1.8
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150

Description

The AO4490/L uses advanced trench technology to provide excellent R_DS(ON), low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V V_GS(MAX) rating. It is ESD protected. This device is suitable for use as a load switch and general purpose applications. AO4490 and AO4490L are electrically identical. -RoHS Compliant -AO4490L is Halogen Free