AO4466

MOSFET N-CH 30V 9.4A 8-SOIC

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AO4466 Picture
SeekIC No. : 003432575 Detail

AO4466: MOSFET N-CH 30V 9.4A 8-SOIC

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Part Number:
AO4466
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 9.4A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.4A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 17nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 820pF @ 15V
Power - Max: 3.1W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Input Capacitance (Ciss) @ Vds: 820pF @ 15V
Power - Max: 3.1W
Gate Charge (Qg) @ Vgs: 17nC @ 10V
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Current - Continuous Drain (Id) @ 25° C: 9.4A
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.4A, 10V


Pinout






Description

The AO4466 is designed as one kind of N-channel enhancement mode field effect transistor that can be used in as a load switch or in PWM applications. Also this device is a green product ordering option and electrically identical. Features of the AO4466 are:(1)RDS(ON) < 35 m (VGS = 4.5V);(2)RDS(ON) < 23 m (VGS = 10V);(3)ID = 9.4A (VGS = 10V);(4)VDS (V) = 30 V.

The absolute maximum ratings of the AO4466 can be summarized as:(1)Drain-Source Voltage: 30 V;(2)Gate-Source Voltage: +/- 20 V;(3)Continuous Drain Current TA=25°C: 9.4 A;(4)Continuous Drain Current TA=70°C: 7.7 A;(5)Pulsed Drain Current: 50 A;(6)Power Dissipation TA=25°C: 3.1 W;(7)Power Dissipation TA=70°C: 2.1 W;(8)Junction and Storage Temperature Range: -55 to 150 .

The electrical characteristics of AO4466 can be summarized as:(1)Drain-Source Breakdown Voltage: 30 V;(2)Zero Gate Voltage Drain Current: 0.004 to 1 uA;(3)Gate-Body leakage current: 100 nA;(4)Gate Threshold Voltage: 1 to 3 V;(5)On state drain current: 20 A;(6)Forward Transconductance: 10 to 24 S;(7)Diode Forward Voltage: 0.75 to 1 V;(8)Maximum Body-Diode Continuous Current: 4.3 A. If you want to know more information such as the electrical characteristics about AO4466, please download the datasheet in www.seekic.com or www.chinaicmart.com.






Parameters:

Technical/Catalog InformationAO4466
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C9.4A
Rds On (Max) @ Id, Vgs23 mOhm @ 9.4A, 10V
Input Capacitance (Ciss) @ Vds 820pF @ 15V
Power - Max3.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs17nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO4466
AO4466
785 1037 2 ND
78510372ND
785-1037-2



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