AO4446

The AO4446 is designed as one kind of N-channel enhancement mode field effect transistor that can be used in as a load switch or in PWM applications. Also this device is a green product ordering option and electrically identical. Features of the AO4466 are:(1)RDS(ON) < 14.5 m (VGS = 4.5V);(2)RDS(ON) < 8.5 m (VGS = 10V);(3)ID = 15 A (VGS = 10V);(4)VDS (V) = 30 V.

The absolute maximum ratings of the AO4446 can be summarized as:(1)Drain-Source Voltage: 30 V;(2)Gate-Source Voltage: +/- 20 V;(3)Continuous Drain Current TA=25°C: 15 A;(4)Continuous Drain Current TA=70°C: 12 A;(5)Pulsed Drain Current: 40 A;(6)Power Dissipation TA=25°C: 3 W;(7)Power Dissipation TA=70°C: 2.1 W;(8)Junction and Storage Temperature Range: -55 to 150 .

The electrical characteristics of AO4446 can be summarized as:(1)Drain-Source Breakdown Voltage: 30 V;(2)Zero Gate Voltage Drain Current: 1 uA;(3)Gate-Body leakage current: 100 nA;(4)Gate Threshold Voltage: 1.0 to 3.0 V;(5)On state drain current: 40 A;(6)Forward Transconductance: 27 S;(7)Diode Forward Voltage: 0.71 to 1 V;(8)Maximum Body-Diode Continuous Current: 4 A. If you want to know more information such as the electrical characteristics about the AO4446, please download the datasheet in www.seekic.com or www.chinaicmart.com.